Fully overheated single-electron transistor

this work in collaboration with my Finnish colleagues Matti Laakso and Tero will appear tomorrow at http://arxiv.org/abs/0912.2832.
We looked at one of the most studied nanodevices, SE transistor. To our surprise, we have discovered a set of new effects related to temperature fluctations in the device core while it is overheated. Those are reflected in the current through the device.

There is a detail of special significance for me. I got to Delft for the first time about twenty years ago and talk to experimentalists, Bart Geerligs and Hans Mooij. They listed questions I could help them with. One was a little puzzle with freshly observed co-tunneling transport. There was a factor of two discrepancy between experiment and theory. It looks like finally we managed to resolve this puzzle: overheating must be the reason.

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