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Fully overheated single-electron transistor

this work in collaboration with my Finnish colleagues Matti Laakso and Tero will appear tomorrow at
We looked at one of the most studied nanodevices, SE transistor. To our surprise, we have discovered a set of new effects related to temperature fluctations in the device core while it is overheated. Those are reflected in the current through the device.

There is a detail of special significance for me. I got to Delft for the first time about twenty years ago and talk to experimentalists, Bart Geerligs and Hans Mooij. They listed questions I could help them with. One was a little puzzle with freshly observed co-tunneling transport. There was a factor of two discrepancy between experiment and theory. It looks like finally we managed to resolve this puzzle: overheating must be the reason.

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Article accepted for PRL on April 16

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